Circuit design with adjustable threshold using the independently controlled double gate feature of the Vertical Slit Field Effect Transistor (VESFET)
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چکیده
منابع مشابه
Design and Simulation of a Dual Material Double Gate Tunnel Field Effect Transistor Using Tcad
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ژورنال
عنوان ژورنال: Advances in Radio Science
سال: 2010
ISSN: 1684-9973
DOI: 10.5194/ars-8-275-2010